RSS100N03 |
RFQ for RSS100N03 Required Field |
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| Technical/Catalog Information | RSS100N03TB |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 13.3 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1070pF @ 10V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RSS100N03TB RSS100N03TB RSS100N03TBTR ND RSS100N03TBTRND RSS100N03TBTR |
| Product | Manufacturers | Pack | D/C |
| RSS100N03 | - | SOP/8 | 0443+ |
Typical Application |
Features |
| Power switching, DC/DC converter. | · Low on-resistance.· Built-in G-S Protection Diode.· Small and Surface Mount Package (SOP8). |
| Parameter |
Symbol |
Limits |
Unit | |
| Drain−source voltage |
VDSS |
30 |
V | |
| Gate−source voltage |
VGSS |
20 |
V | |
| Drain current | Continuous |
ID |
±10 |
A |
| Pulsed |
IDP |
±40 |
A(1) | |
| Source current (Body diode) |
Continuous |
IS |
1.6 |
A |
| Pulsed |
ISP |
6.4 |
A(1) | |
| Total power dissipation |
PD |
2 |
W(2) | |
| Channel temperature |
Tch |
150 |
°C | |
| Range of Strage temperature |
Tstg |
−55 to +150 |
°C | |
